First-principles Calculations Research Articles

Evaluation of the Exchange Stiffness Constants of Itinerant Magnets at Finite Temperatures from the First-Principles Calculations

Evaluation of the Exchange Stiffness Constants of Itinerant Magnets at Finite Temperatures from the First-Principles Calculations

Realistic Simulation of Valence-Band Photoemission Spectra by Using First-Principles Calculations on the Basis of FLAPW Method

Realistic Simulation of Valence-Band Photoemission Spectra by Using First-Principles Calculations on the Basis of FLAPW Method

Rational design of hollow C@SnS2/SnS@C cubes with N-doping to realize stepwise sodium storage induced structural stability for highly stable cycling performance

Current application of SnS2-based anodes in sodium-ion batteries fails to meet the demand for higher Na+ storage capacity due to the structural pulverization induced by significant volume changes during cycling. Herein, a novel composite of hollow C@SnS2/SnS@C cubes with excellent diffusion kinetics and structural stability from stepwise Na+ storage is designed. The SnS with gentle pseudocapacitive reaction acts as the self-supporter to prevent the collapse of SnS2/SnS heterostructure during the Na+ insertion/extraction. Together with the clamping of double carbon layers and hollow construction, the volume change caused structural instability in heterostructure is effectively alleviated. The rapid transport of electrons and ions within the built-in electric field of heterostructure endows the composite an excellent diffusion kinetics, which is generated from the narrow bandgap and outstanding Na+ absorption of heterostructure according to the first-principle calculation. Thus, the as-prepared composite maintains a remarkable capacity of 547.9 mAh g−1 after 200 cycles at current density of 0.5 A g−1. Even a capacity of 502.5 mAh g−1 with a low attenuation rate of 0.035 % per cycle is achieved at 2 A g−1 after 1000 cycles. The work proposes an effective approach to achieve effective Na + storage of SnS2-based anodes with long-lasting structural stability.

(C8H7N2O2)2[Bi2Br8]·2H2O and (C8H7N2O2)6[Bi2Cl10]Cl2·2H2O: Exploring Birefringent Crystals in Hybrid Halide Systems.

In this study, new hybrid birefringent crystals of (C8H7N2O2)2[Bi2Br8]·2H2O and (C8H7N2O2)6[Bi2Cl10]Cl2·2H2O were successfully synthesized by introducing a new birefringent group [C8H7N2O2]+ by a simple aqueous solution evaporation method. They crystallize in the P21/n space group, and their structure consists mainly of the π-conjugated group [C8H7N2O2]+ and the octahedron centered on Bi3+. By first-principles calculations, the birefringence response comes from the [C8H7N2O2]+ group with a planar π-conjugated structure. Meanwhile, the synthesis, structure, first-principles calculations, and optical properties are reported in this paper.

Ion solvation free energy calculations based on first-principles molecular dynamics thermodynamic integration.

Numerous electrochemistry reactions require the precise calculation of the ion solvation energy. Despite the significant progress in the first-principles calculations for crystals and defect formation energies for solids, the liquid system free energy calculations still face many challenges. Ion solvation free energies can be calculated via different semiempirical ways, e.g., using implicit solvent models or cluster of explicit molecule models; however, systematically improving these models is difficult due to their lack of a solid theoretical base. A theoretically sound approach for calculating the free energy is to use thermodynamic integration. Nevertheless, owing to the difficulties of self-consistent convergence in first-principles calculations for unphysical atomic configurations, the computational alchemy approach has not been widely used for first-principles calculations. This study proposes a general approach to use first-principles computational alchemy for calculating the ion solvation energy. This approach is also applicable for other small molecules. The calculated ion solvation free energies for Li+, Na+, K+, Be2+, Mg2+, and Ca2+ are close to the experimental results, and the standard deviation due to molecular dynamics fluctuations is within 0.06eV.

Long-Range Influence of Cr on the Stacking Fault Energy of Cr-Containing Concentrated Solid-Solution Alloys

Single-phase concentrated solid-solution alloys (CSAs) have exhibited excellent mechanical and radiation tolerance properties, making them potential candidate materials for nuclear applications. These excellent properties are closely related to dislocation movements, which depend on the stacking fault energies (SFEs). In CSAs, SFEs show large fluctuations due to variations in the local atomic environments in the vicinity of the stacking faults. In this work, first-principle calculations were performed to investigate the origin of the fluctuations in the SFEs of the widely studied CSA, NiCoCr, which show a very wide distribution from about −200 mJ/m2 to 60 mJ/m2. Compared to the common understanding that only atoms in close proximity to the stacking fault influence the SFEs in pure metals and dilute alloys, charge redistribution can be observed in several nearby planes of the stacking fault in NiCoCr, indicating that atoms several atomic layers away from stacking fault also contribute to the SFEs. Our analysis shows that Cr plays a major role in the large fluctuation in the SFEs of NiCoCr based on both electronic and magnetic responses. The flexible electronic structure of Cr facilitates easier charge transfer with Cr in several nearby atomic planes near the stacking fault, leading to significant changes in the d-electron number, orbital occupation number, and magnetic moments of Cr.

Anisotropic materials with abnormal Poisson's ratios and acoustic velocities.

Isotropic materials are required to adhere to various mechanical principles due to their limited thermal stability. For instance, it is essential for Poisson's ratio to be within the range of -1 to 0.5, and the longitudinal wave velocity must exceed the transverse wave velocity. Nevertheless, perfect crystals, as anisotropic materials, have the ability to defy conventional rules. Through the integration of high-throughput processes and first-principles calculations, a comprehensive exploration of known materials was conducted, resulting in the establishment of a database featuring an extreme anisotropic mechanism. This included the identification of abnormal Poisson's ratios (with the directional Poisson's ratio ranging from -3.00 to 3.67), the discovery of extreme negative linear compressibility, the determination of the upper and lower limits of the sound velocity, and other associated properties. Several materials with abnormal Poisson's ratios (<-1 or >0.5) were listed, and their peculiar mechanical behavior, wherein the volume decreased counterintuitively with uniaxial tension, was discussed. Finally, this study focused on the velocities of longitudinal and transverse waves, with specific emphasis on materials exhibiting transverse wave velocities that exceeded the longitudinal wave velocities.

Tunable electronic, transport, and optical properties of fluorine- and hydrogen-passivated two-dimensional Ga2O3 by uniaxial strain

Two-dimensional (2D) semiconductors have shown great prospects for future-oriented optoelectronic applications, whereas the applications of conventional 2D materials are significantly impeded by their low electron mobility (⩽200 cm2 V−1 s−1). In this work, strain-mediated fluorine- and hydrogen-passivated 2D Ga2O3 systems (FGa2O3H) have been explored via using first-principles calculations with the Heyd–Scuseria–Ernzerh and Perdew–Burke–Ernzerhof functionals. Our results reveal a considerable high electron mobility of FGa2O3H up to 4863.05 cm2 V−1 s−1 as the uniaxial tensile strain reaches 6%, which can be attributed to the enhanced overlapping of wave functions and bonding features. Overall, when applying uniaxial strain monotonously along the a(b) direction from compressive to tensile cases, the bandgaps of 2D FGa2O3H increase initially and then decrease, which originates from the changes of σ* anti-bonding in the conduction band minimum and π bonding states in the valence band maximum accompanying the lengthening Ga–O bonds. Additionally, when the tensile strain is larger than 8%, the stronger π bonding at the G point leads to an indirect-to-direct transition. Besides the highest electron mobility observed in n-type doped 2D FGa2O3H with 6% tensile strain, the electrical conductivity is enhanced and further elevated as the temperature increases from 300 K to 800 K. The variations of the absorption coefficient in the ultraviolet region are negligible with increasing tensile strain from 0% to 6%, which sheds light on its applications in high-power optoelectronic devices.

Stacking-dependent interlayer magnetic interactions in CrSe2.

Recently, CrSe2, a new ferromagnetic van der Waals two-dimensional material, was discovered to be highly stable under ambient conditions, making it an attractive candidate for fundamental research and potential device applications. Here, we study the interlayer interactions of bilayer CrSe2using first-principles calculations. We demonstrate that the interlayer interaction depends on the stacking structure. The AA and AB stackings exhibit antiferromagnetic (AFM) interlayer interactions, while the AC stacking exhibits ferromagnetic (FM) interlayer interaction. Furthermore, the interlayer interaction can be further tuned by tensile strain and charge doping. Specifically, under large tensile strain, most stacking structures exhibit FM interlayer interactions. Conversely, under heavy electron doping, all stacking structures exhibit AFM interlayer interactions. These findings are useful for designing spintronic devices based on CrSe2.

Assembly-inspired multiferroicity with nontrivial Chern insulating phase from exohedral metallofullerenes.

Fullerene-assembled low-dimensional materials have been experimentally realized in polymorphic forms and have attracted significant interest very recently. Here, we predict a two-dimensional (2D) honeycomb lattice material TM2(C60)3 (TM = Cr, Mo, and W) assembled from exohedral metallofullerene clusters TM(C60)3 that could exhibit planar triangular geometries. According to first-principles calculations combined with Monte Carlo simulations, we suggest that these 2D assembled materials exhibit various exotic physical properties, including ferromagnetism, ferroelectricity, and quantum anomalous Hall effect. Interestingly, mechanical strains could effectively tune their magnetic moments and switch the conducting spin channel of the Dirac bands at the Fermi level. Our work provides a new cluster-assembly design strategy toward cluster-assembled 2D materials based on fullerene characters.

The type-I, III nodal ring, type-I, III quadratic nodal point, and Dirac valley phonons in 2D kagome lattices M2C3 (M = As, Bi, Cd, Hg, P, Sb, Zn)

Topological phases in kagome systems have garnered considerable interest since the introduction of the colloidal kagome lattice. Our study employs first-principle calculations and symmetry analysis to predict the existence of ideal type-I, III nodal rings (NRs), type-I, III quadratic nodal points (QNPs), and Dirac valley phonons (DVPs) in a collection of two-dimensional (2D) kagome lattices M2C3 (M = As, Bi, Cd, Hg, P, Sb, Zn). Specifically, the Dirac valley points (DVPs) can be observed at two inequivalent valleys with Berry phases of +π and −π , connected by edge arcs along the zigzag and armchair directions. Additionally, the QNP is pinned at the Γ point, and two edge states emerge from its projections. Notably, these kagome lattices also exhibit ideal type-I and III nodal rings protected by time inversion and spatial inversion symmetries. Our work examines the various categories of nodal points and nodal ring phonons within the 2D kagome systems and presents a selection of ideal candidates for investigating topological phonons in bosonic systems.

Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe4

The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds.

Synthesis, crystal structure and properties of YB2C2

ABSTRACT YB2C2 is a novel ultra-high temperature ceramic material with high damage tolerance. In this work, the synthesis mechanism, crystal structure, electronic structure, elastic properties and thermal shock resistance of YB2C2 were systematically investigated through experiments and calculations. It was determined by differential scanning calorimetry with the heating rate of 10°C/min that YB2C2 was formed by the reaction of YB2C and C at about 1202°C, and became the main phase at 1450°C. The space group of YB2C2 was determined to be P4/mbm by X-ray diffraction, transmission electron microscopy, Rietveld refinement and first-principles calculations for the first time. The lattice constants are a = b = 0.5351 nm and c = 0.3561 nm. The atom positions are as follows: Y is located at 2a (0, 0, 0), B is located 4 h (0.133, 0.633, 0.5) and C is located at 4 h (0.662, 0.162, 0.5). The chemical bonding of YB2C2 displayed sharp anisotropy, with strong B-C bond within the B2C2 nets, and weak Y-B/Y-C bond between Y atom layers and B2C2 nets. Additionally, YB2C2 exhibited abnormal thermal shock resistance when the thermal shock temperature exceeded 800°C, with the residual flexural strength at 1300°C being more than 70% of the strength at room temperature.

Structural stability, mechanical, and thermodynamic properties under pressure of B2-type CuM (M = Be, Al, and Zn) alloys: a DFT investigation

In this work, we systematically examined the structural stability, mechanical properties, and thermodynamic behavior of B2-type CuBe alloy, and compared the results with isostructural Cu-based alloys (CuAl and CuZn) by employing first-principles calculations in the pressure range of −22 to 100 GPa. This study revealed the stable existence of CuBe alloy at low-density expansion states (e.g. ∼ −20 GPa), indicating its superior structural stability compared to CuAl and CuZn. The pressure dependence of properties such as cell parameter a (a/a 0) and density ρ (ρ/ρ 0), elastic parameters (elastic constants C ij , bulk modulus B, shear modulus G, and Young's modulus E), deduced parameters (B/G ratio, Poisson's ratio ν, Vickers hardness, sound velocity, and Debye termperature ΘD), and thermodynamic parameters (free energy F, entropy S, and heat capacity C v) were investigated. All CuM (M = Be, Al, and Zn) alloys had more difficulty undergoing uniaxial stress than shear stress. External pressure reduced the ductility of the CuBe alloy, while excess pressure (P > 50 GPa) resulted in increased ductility, which was similar to CuAl but different from CuZn. The hardness and ΘD values demonstrated consistent variation corresponding to the ductility changes. Thermodynamic parameters were minimally affected by pressure, and the stronger interactions led to greater F in the CuBe alloy. These findings offer confidence for the future design of ordered Cu-Be alloys with exceptional properties.

A Systematic Study of the Temperature Dependence of the Dielectric Function of GaSe Uniaxial Crystals from 27 to 300 K

We report the temperature dependences of the dielectric function ε = ε1 + iε2 and critical point (CP) energies of the uniaxial crystal GaSe in the spectral energy region from 0.74 to 6.42 eV and at temperatures from 27 to 300 K using spectroscopic ellipsometry. The fundamental bandgap and strong exciton effect near 2.1 eV are detected only in the c-direction, which is perpendicular to the cleavage plane of the crystal. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that incorporates the Bose–Einstein statistical factor and the temperature coefficient to describe the electron–phonon interaction. To determine the origin of this anisotropy, we perform first-principles calculations using the mBJ method for bandgap correction. The results clearly demonstrate that the anisotropic dielectric characteristics can be directly attributed to the inherent anisotropy of p orbitals. More specifically, this prominent excitonic feature and fundamental bandgap are derived from the band-to-band transition between s and pz orbitals at the Γ-point.

Is Ba3In2O6 a high-Tc superconductor?

It has been suggested that Ba3In2O6 might be a high-Tc superconductor. Experimental investigation of the properties of Ba3In2O6 was long inhibited by its instability in air. Recently epitaxial Ba3In2O6 with a protective capping layer was demonstrated, which finally allows its electronic characterization. The optical bandgap of Ba3In2O6 is determined to be 2.99 eV in-the (001) plane and 2.83 eV along the c-axis direction by spectroscopic ellipsometry. First-principles calculations were carried out, yielding a result in good agreement with the experimental value. Various dopants were explored to induce (super-)conductivity in this otherwise insulating material. Neither A- nor B-site doping proved successful. The underlying reason is predominately the formation of oxygen interstitials as revealed by scanning transmission electron microscopy and first-principles calculations. Additional efforts to induce superconductivity were investigated, including surface alkali doping, optical pumping, and hydrogen reduction. To probe liquid-ion gating, Ba3In2O6 was successfully grown epitaxially on an epitaxial SrRuO3 bottom electrode. So far none of these efforts induced superconductivity in Ba3In2O6, leaving the answer to the initial question of whether Ba3In2O6 is a high-Tc superconductor to be ‘no’ thus far.

First principles study of transition metal (TM = Sc, Ti, V, Cr, Mn) doped penta-BAs5 monolayer for adsorption of CO, NH3, NO, SO2

In this paper, the adsorption capacity of intrinsic penta-BAs5 monolayer on CO, NH3, NO, SO2 and the effect of transition metal doping on gas sensing characteristics are systematically studied by first-principles calculations. Adsorption energy, recovery time, band structure, charge transfer and density of states (DOS) are investigated. The electronic properties and sensing mechanisms under different adsorption systems are expounded. The results showed that the intrinsic penta-BAs5 monolayer had the strongest adsorption capacity for NO and weak sensitivity to CO, NH3 and SO2, which shown strong gas selectivity. Moreover, the recovery time of NO at 380 k was 3.93 s, which was more inclined to be desorption at high temperature. In addition, Sc and Ti doping could selectively improve the adsorption capacity of the intrinsic penta-BAs5 monolayer. The charge transfer of SO2-Sc-BAs5 and CO-Ti-BAs5 were increased by 6.78 and 10.33 times compared with those before doping. The band structure and DOS show that Ti atom and CO have orbital hybridization, which improved the interaction between gases and penta-BAs5. Therefore, intrinsic penta-BAs5, Sc-BAs5 and Ti-BAs5 are suitable for gas sensing and toxic gas monitoring, and have broad application prospects.

Dimension-Confined Growth of a Crack-Free PbS Microplate Array for Infrared Image Sensing.

Epitaxy of semiconductors is a necessary step toward the development of electronic devices such as lasers, detectors, transistors, and solar cells. However, the lattice ordering of semiconductor functional films is inevitably disrupted by excessive concentrated stress due to the mismatch of the thermal expansion coefficient. Herein, combined with the first-principles calculation, we find that a rigid film/substrate bilayer heterostructure with a large thermal expansion mismatch upon cooling to room temperature from growth is free of surface cracks when the rigid film exhibits a dimension smaller than the critical condition for the breaking energy. The principle has been verified in a PbS/SrTiO3 bilayer system that is crack free on PbS single-crystalline microplate arrays through the designing of a dimension-confined growth (DCG) method. Interestingly, this crack-free, large-scale PbS microplate array exhibits exceptional uniformity in morphology, dimensions, thickness, and photodetection properties, enabling a broad-band infrared image sensing. This work provides a new perspective to design materials and arrays that demand smooth and continuous surfaces, which are not limited only to semiconductor electronics but also include mechanical structures, optical materials, biomedical materials, and others.

Revisiting thermodynamics in (LiF, NaF, KF, CrF2)–CrF3 by first-principles calculations and CALPHAD modeling

The thermodynamic description of the (LiF, NaF, KF, CrF2)–CrF3 systems has been revisited, aiming for a better understanding of the effects of Cr on the FLiNaK molten salt. First-principles calculations based on density functional theory (DFT) were performed to determine the electronic and structural properties of each compound, including the formation enthalpy, volume, and bulk modulus. DFT-based phonon calculations were carried out to determine the thermodynamic properties of compounds, for example, enthalpy, entropy, and heat capacity as functions of temperature. Phonon-based thermodynamic properties show a good agreement with experimental data of binary compounds LiF, NaF, KF, CrF3, and CrF2, establishing a solid foundation to determine thermodynamic properties of ternary compounds as well as to verify results estimated by the Neumann-Kopp rule. Additionally, DFT-based ab initio molecular dynamics (AIMD) simulations were employed to predict the mixing enthalpies of liquid salts. Using DFT-based results and experimental data in the literature, the (LiF, NaF, KF, CrF2)–CrF3 system has been remodeled in terms of the CALculation of PHAse Diagrams (CALPHAD) approach using the modified quasichemical model with quadruplet approximation (MQMQA) for liquid. Calculated phase stability in the present work shows an excellent agreement with experiments, indicating the effectiveness of combining DFT-based total energy, phonon, and AIMD calculations, and CALPHAD modeling to provide the thermodynamic description in complex molten salt systems.

Picometer-Scale Atomic Shifts Governing Subdisordered Structures in Diamond

Picometer-Scale Atomic Shifts Governing Subdisordered Structures in Diamond